vb-3 a vertically integrated resonant tunneling device with multiple negative differential resistances (Bendix Corporation)
90
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Bendix Corporation
vb-3 a vertically integrated resonant tunneling device with multiple negative differential resistances
Vb 3 A Vertically Integrated Resonant Tunneling Device With Multiple Negative Differential Resistances, supplied by Bendix Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/vb-3+a+vertically+integrated+resonant+tunneling+device+with+multiple+negative+differential+resistances/vb+3+a+vertically+integrated+resonant+tunneling+device+with+multiple+negative+differential+resistances/10__1109_slash_16__8885-113-0-25
Average 90 stars, based on 1 article reviews
Vb 3 A Vertically Integrated Resonant Tunneling Device With Multiple Negative Differential Resistances, supplied by Bendix Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/vb-3+a+vertically+integrated+resonant+tunneling+device+with+multiple+negative+differential+resistances/vb+3+a+vertically+integrated+resonant+tunneling+device+with+multiple+negative+differential+resistances/10__1109_slash_16__8885-113-0-25
Average 90 stars, based on 1 article reviews
vb-3 a vertically integrated resonant tunneling device with multiple negative differential resistances - by Bioz Stars,
2026-09
90/100 stars
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other:Article Title: Influence of quantum well width on DC and RF device performance in pseudomorphic Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As MODFETs Article Snippet: ports of MOSFET device analysis which give the dependence of B / A on channel length as e-iiL, we found that B / A for both conventional and LDD HFET’s depend on channel length as eDiIL.. B for the conventional device has a similar dependence as B / A ; however, B for an LDD device does not depend on channel length indicating, as expected, that the drain lateral electric field does not modulate the source-substrate junction bamer. |